4.結論

首次將(jiang)Langmuir-Schaefer方法(fa)用(yong)(yong)于DEAs電(dian)(dian)極(ji)的(de)制備(bei)。將(jiang)多壁(bi)碳納米(mi)管(guan)和(he)聚(ju)（烷基噻吩）結合在(zai)一起，在(zai)空(kong)氣-水界面形成穩定的(de)單(dan)(dan)分(fen)子(zi)膜，然后使(shi)用(yong)(yong)Langmuir-Schaefer技術(shu)將(jiang)其(qi)轉移到PDMS膜上。單(dan)(dan)層(ceng)電(dian)(dian)極(ji)由嵌入鉑(bo)單(dan)(dan)層(ceng)中的(de)互(hu)連多壁(bi)碳納米(mi)管(guan)網絡組成，其(qi)中鉑(bo)賦予(yu)機(ji)械性(xing)能，而多壁(bi)碳納米(mi)管(guan)確保系統的(de)導電(dian)(dian)性(xing)。復合單(dan)(dan)分(fen)子(zi)膜可(ke)拉(la)伸(shen)，導電(dian)(dian)率高達(da)(da)100%(～20 MΩ/0%應(ying)變時(shi)，～5 GΩ/在(zai)100%應(ying)變下）。使(shi)用(yong)(yong)LS方法(fa)制作圖案化超薄(bo)可(ke)拉(la)伸(shen)電(dian)(dian)極(ji)，可(ke)以制作具(ju)有1.4μm厚(hou)PDMS介電(dian)(dian)膜的(de)薄(bo)DEA。僅(jin)在(zai)100V下，該DEA達(da)(da)到4.0%線性(xing)應(ying)變。與(yu)DEAs通常(chang)需(xu)要的(de)kV驅動電(dian)(dian)壓相比，這(zhe)種低工作電(dian)(dian)壓為DEAs開(kai)辟了新的(de)應(ying)用(yong)(yong)領(ling)域。我們在(zai)這(zhe)里報告的(de)LS電(dian)(dian)極(ji)是(shi)DEA在(zai)小于5V時(shi)產生全應(ying)變的(de)關鍵構件：通過(guo)使(shi)用(yong)(yong)LS/LB技術(shu)制造彈性(xing)體和(he)電(dian)(dian)極(ji)，將(jiang)有可(ke)能制造多層(ceng)DEA，其(qi)中所有層(ceng)都是(shi)一個單(dan)(dan)分(fen)子(zi)厚(hou)度。這(zhe)將(jiang)是(shi)DEA技術(shu)的(de)最終物(wu)理極(ji)限(xian)。

致謝

我(wo)們衷心感謝Jun Shintake博(bo)(bo)士(shi)、Matthias Imboden博(bo)(bo)士(shi)、Alexandre Poulin博(bo)(bo)士(shi)和(he)Samuel Schlater先生的有益評論(lun)(lun)和(he)討論(lun)(lun)。這(zhe)項工作是(shi)由歐盟的地(di)平(ping)線2020研究和(he)創(chuang)新計劃在瑪麗SK·OOOWSKA居(ju)里補助金協議(yi)，第64 1822-MICACT通過瑞士(shi)國家(jia)教育、研究和(he)創(chuang)新秘(mi)書處，以及瑞士(shi)國家(jia)科學(xue)基金會授予第200020號165993。

附錄(lu)A.補充數(shu)據

與(yu)本文相關的(de)補(bu)充數據可在在線版本中找到，網址為//doi.org/10.1016/j.snb.2018.01.145.

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